Thursday, October 13, 2016

8:30-9:00

Registration

9:00-9:10

Opening Remarks

9:10-9:50

The impact of GaN and SiC on the density and performance of power electronics

Infineon Technologies

Dr. Eric Persson

Head of GaN Applications

9:50-10:30

SiC MOSFET design for high power application

Delta Electronics, Inc.

Dr. Herman Chang

General Manager

10:30-10:50

Coffee Break

10:50-11:30

Materials Design Aspects for Power Electronic System

AG materials Inc.

Dr. Mannfu Rau

President

11:30-12:00

Panel Discussion

12:00-13:20

Lunch

13:20-14:00

GaN MISHEMT for Power Switching Applications : Materials and Process Aspects

National Chiao Tung University

Dr. Edward Y. Chang

Vice president

14:00-14:40

Today and the Future of GaN HEMTs for Power Conversion

Transphorm Inc.

Dr. Primit Parikh

Cofounder & President

14:40-15:00

Coffee Break

15:00-15:40

Commercialization of SiC power device production line

Episil Holding Inc.

Dr. Ian Chan

CEO

15:40-16:20

lectures

STMicroelectronics

Dr. Giuseppe Izzo

General Manager and Regional Vice President

16:20-17:00

Panel Discussion

18:00-20:00

Banquet

Friday, October 14, 2016

9:30-11:30

Expert forum (Closed meeting)

11:30-13:00

Lunch